English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

This paper describes a calculation of the spontaneous emission limitedlinewidth of a semiconductor laser consisting of hybrid or heterogeneouslyintegrated, silicon and III-V intracavity components. Central to the approachare a) description of the multi-element laser cavity in terms of compositelaser/free-space eigenmodes, b) use of multimode laser theory to treat modecompetition and multiwave mixing, and c) incorporation of quantum-opticalcontributions to account for spontaneous emission effects. Application of themodel is illustrated for the case of linewidth narrowing in an InAs quantum-dotlaser coupled to a high-Q SiN cavity.

Analysis of the spontaneous emission limited linewidth of an integrated III-V/SiN laser