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Electro-optic modulators provide a key function in optical transceivers andincreasingly in photonic programmable Application Specific Integrated Circuits(ASICs) for machine learning and signal processing. However, both foundry readysilicon based modulators and conventional material based devices utilizingLithium niobate fall short in simultaneously providing high chip packagingdensity and fast speed. Current driven ITO based modulators have the potentialto achieve both enabled by efficient light matter interactions. Here, weintroduce micrometer compact Mach Zehnder Interferometer (MZI) based modulatorscapable of exceeding 100 GHz switching rates. Integrating ITO thin films atop aphotonic waveguide, spectrally broadband, and compact MZI phase shifter.Remarkably, this allows integrating more than 3500 of these modulators withinthe same chip area as only one single silicon MZI modulator. The modulatordesign introduced here features a holistic photonic, electronic, and RF-basedoptimization and includes an asymmetric MZI tuning step to optimize theExtinction Ratio (ER) to Insertion Loss (IL) and dielectric thickness sweep tobalance the tradeoffs between ER and speed. Driven by CMOS compatible biasvoltage levels, this device is the first to address next generation modulatordemands for processors of the machine intelligence revolution, in addition tothe edge and cloud computing demands as well as optical transceivers alike.

100 GHz Micrometer compact broadband Monolithic ITO Mach Zehnder Interferometer Modulator enabling 3500 times higher Packing Density