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We report on the strong anisotropy of the inter-band process of impactionization in direct-gap cubic semiconductors with either weak or strongspin-orbit coupling at low effective temperatures of electron distribution $T$,and the crossover to isotropic behavior with increasing $T$. Such anisotropy isrelated to specific mechanism of the impact ionization involving coupling ofthe electron and heavy hole states $\it via$ remote bands, which is vanishingfor some high-symmetry propagation directions of an initial electron, namely$\mathrm{[100]}$ and $\mathrm{[111]}$. At room temperature impact ionizationrate in narrow-gap semiconductors $\mathrm{InSb}$, $\mathrm{InAs}$,$\mathrm{GaSb}$ and $\mathrm{In}_{0.53}\mathrm{Ga}_{0.47}\mathrm{As}$ isisotropic while in middle-gap $\mathrm{InP}$, $\mathrm{GaAs}$ and$\mathrm{CdTe}$ both terms are comparable. We propose simple and justifiedanalytic generalization of Keldysh formula for the impact ionization rate validfor direct-gap semiconductors with $E_g$ up to $\mathrm{1.5}~\mathrm{eV}$,which is suitable for incorporation into modelling software.

Competition between isotropic and strongly anisotropic terms in the impact ionization rate of narrow- and middle-gap cubic semiconductors