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Transition-metal nitrides (e.g., TiN, ZrN, TaN) are incredible materials withexcellent complementary-metal-oxide-semiconductor compatibility and remarkableperformance in refractory plasmonics and superconducting quantum electronics.Epitaxial growth of flexible transition-metal nitride films, especially atwafer-scale, is fundamentally important for developing high-performanceflexible photonics and superconducting electronics, but the study is rare thusfar. This work reports the high-quality epitaxy of 2-inch titanium nitride(TiN) films on flexible fluorophlogopite-mica (F-mica) substrates via reactivemagnetron sputtering. Combined measurements of spectroscopic ellipsometer andelectrical transport reveal the superior plasmonic and superconductingperformance of TiN/F-mica films owing to the high single crystallinity. Moreinterestingly, the superconductivity of these flexible TiN films can bemanipulated by the bending states, and enhanced superconducting criticaltemperature TC is observed in convex TiN films with in-plane tensile strain.Density-functional-theory calculations uncover that the strain can tune theelectron-phonon interaction strength and resultant superconductivity of TiNfilms. This study provides a promising route towards integrating scalablesingle-crystalline conductive transition-metal nitride films with flexibleelectronics for high-performance plasmonics and superconducting electronics.

Wafer-Scale Epitaxy of Flexible Nitride Films with Superior Plasmonic and Superconducting Performance