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Upgraded metallurgical-grade (UMG) Si is obtained via a purification routealternative to the one used for conventional polysilicon and with significantlyreduced environmental impact. Additionally, despite a lower purity level in thefeedstock than polysilicon, UMG-Si has demonstrated potential for thefabrication of highly efficient and low-cost solar cells. Low initial bulkcarrier lifetimes recorded in UMG-Si bare wafers can be improved by means of anadequate Phosphorus Diffusion Gettering (PDG) process to the level of mc-Si. Inthis letter, optimized PDG processes for UMG-Si are reported, resulting inincreased values between 20 and 250 times the original carrier lifetimes andrecord figures above 645 us.

Bulk carrier lifetime surpassing 600 us in Upgraded Metallurgical-grade Silicon multicrystalline wafers after Phosphorus Diffusion Gettering