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Although rare earth nickelates (ReNiO3) exhibit abundant electronic phasesand widely adjustable metal to insulator electronic transition properties,their practical electronic applications are largely impeded by their intrinsicmeta stability. Apart from elevating oxygen reaction pressures, heterogeneousnucleation is expected as an alternative strategy that enables thecrystallization of ReNiO3 at low meta stability. In this work, the respectiveroles of high oxygen pressure and heterogeneous interface in triggering ReNiO3thin films growth at metastable state are revealed. The ReNiO3 (Re:Nd, Sm, Eu,Gd, and Dy) heterogeneous thin films growth on LaAlO3 single crystal substratehave an effective crystallization at atmosphere without the necessity to applyhigh oxygen pressures, suggesting the interfacial bonding between the ReNiO3and substrates can sufficiently reduce the positive Gibbs formation energy ofReNiO3, which is further verified by the first principles calculations.Nevertheless, the abrupt electronic transitions only appear in ReNiO3 thinfilms grown at high oxygen pressures, in which cases the oxygen vacancies areeffectively eliminated via high oxygen pressure reactions as indicated by nearedge X ray absorption fine structure (NEXAFS). This work unveils thesynergistic effects of heterogeneous nucleation and high oxygen pressure on thegrowth of high quality ReNiO3 thin films.

Revealing the role of interfacial heterogeneous nucleation in metastable thin film growth of rare earth nickelates electronic transition materials