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UV laser annealing (UV-LA) enables surface-localized high-temperature thermalprocessing to form abrupt junctions in emerging monolithically stacked devices,where applicable thermal budget is restricted. In this work, UV-LA is performedto regrow a SOI layer partially amorphized by arsenic ion implantation and toactivate the dopants. In a microsecond scale (~10^-6 s to ~10^-5 s) UV-LAprocess, monocrystalline solid phase recrystallization and dopant activationwithout junction deepening is evidenced, thus opening various applications inlow thermal budget integration flows.

Solid Phase Recrystallization and Dopant Activation in Arsenic Ion-Implanted Silicon-On-Insulator by UV Laser Annealing