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Low power consumption in both static and dynamic modes of operation is a keyrequirement in modern, highly scaled nanoelectronics. Tunneling field-effecttransistors (TFETs) that exploit direct band-to-band tunneling of charges andexhibit steep sub-threshold slope (SS) transfer characteristics are anattractive option in this regard. However, current generation of Si and III-Vheterojunction based TFETs while suffer from low ON current density and ON/OFFcurrent ratios for < 60 mV/dec operation. Semiconducting two-dimensional (2D)layers have recently renewed enthusiasm in novel device design for TFETs notonly because of their atomically-thin bodies that favor superior electrostaticcontrol but the same feature also favors higher ON current density andconsequently high ON/OFF ratio. Here, we demonstrate gate-tunableheterojunction diodes (triodes) fabricated from InSe/Si 2D/3D van der Waalsheterostructures, with a minimum subthreshold swing (SS) as low as 6.4 mV/decand an SS average of 30 mV/dec over 4 decades of current. Further, the devicesshow a large current on/off ratio of approximately 10^6 and on-state currentdensity of 0.3 uA/um at a drain bias of -1V. Our work opens new avenues for 2Dsemiconductors for 3D hetero-integration with Si to achieve ultra-low powerlogic devices.

2D Metal Selenide-Silicon Steep Sub-Threshold Heterojunction Triodes with High On-Current Density