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Erbium doped integrated waveguide amplifier and laser prevail in powerconsumption, footprint, stability and scalability over the counterparts in bulkmaterials, underpinning the lightwave communication and large-scale sensing.Subject to the highly confined mode and moderate propagation loss, gain andpower scaling in such integrated micro-to-nanoscale devices prove to be morechallenging compared to their bulk counterparts. In this work, stimulated bythe prevalent success of double-cladding optical fiber in high-gain/poweroperation, a Ta2O5 cladding is employed in the erbium doped lithium niobate(LN) waveguide amplifier fabricated on the thin film lithium niobate oninsulator (LNOI) wafer by the photolithography assisted chemomechanical etching(PLACE) technique. Above 20 dB small signal internal net gain is achieved atthe signal wavelength around 1532 nm in the 10 cm long LNOI amplifier pumped bythe diode laser at ~980 nm. Experimental characterizations reveal the advantageof Ta2O5 cladding in higher optical gain compared with the air-clad amplifier,which is further explained by the theoretical modeling of the LNOI amplifierincluding the guided mode structures and the steady-state response of erbiumions.

A high-gain cladded waveguide amplifier on erbium doped thin-film  lithium niobate fabricated using photolithography assisted chemo-mechanical  etching