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The motion of free electrons moving parallel and above a semiconductorsurface can be influenced by shining laser light onto the surface. Here wereport strong deflection of aloof electrons by an undoped GaAs surfaceilluminated with a 633nm laser. The deflecting electric field from the surfacephotovoltaic charges extends 100 {\mu}m into the vacuum. As surfacephotovoltage (SPV) is sensitive to the electronic states of the GaAs surface,the aloof electron beam serves as a probe for SPV charge dynamics at themesoscopic length scale. The observed in-plane SPV charge distribution persistsbeyond 1 second after the laser beam is blocked. Our work suggests thepossibility of writing designed 2D charge patterns on semiconductor surfaceswith a scanning laser beam, providing unusual flexibility for electron beammanipulation.

Aloof electron probing of in-plane SPV charge distributions on GaAs surfaces