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Recent progress in the synthesis of highly stable, eco-friendly,cost-effective transition metal-dichalcogenides (TMDC) quantum dots (QDs) withtheir broadband absorption spectrum and wavelength selectivity features haveled to their increasing use in broadband photodetectors. With the solutionbased processing, we demonstrate a super large (~ 0.75 mm^2), UV-Vis broadband(365-633 nm), phototransistor made of WS_2 QDs decorated CVD graphene as activechannel with extraordinary stability and durability in ambient condition(without any degradation of photocurrent till 4 months after fabrication).Here, colloidal 0D WS_2-QDs are used as the photo absorbing material andgraphene acts as the conducting channel. A high photoresponsivity (3.1 x 10^2A/W), higher detectivity (2.2 x 10^12 Jones) and low noise equivalent power (4x 10^{-14} W/Hz^0.5) are obtained at a low bias voltage (V_{ds} = 1V) at anillumination of 365 nm with an optical power as low as 0.8 \mu W/cm^2, whichcan further be tuned by modulating the gate bias. While comparing thephotocurrent between two different morphologies of WS_2 (QDs and 2Dnanosheets), a significant enhancement of photocurrent is observed in case ofQDs based device. Ab initio density functional theory based calculationsfurther support our observation, revealing the role of quantum confinement forthe enhanced photo response. Our work reveals a strategy towards making ascalable, cost-effective, highly performing hybrid two-dimensional (2D/0D)photo detector with graphene-WS_2 QDs, paving the way towards the nextgeneration optoelectronic applications.

High Responsivity Gate Tunable UV-Visible Broadband Phototransistor Based on Graphene-WS2 Mixed Dimensional (2D-0D) Heterostructure