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A dedicated single-cell SiPM structure is designed and measured toinvestigate the radiation damage effects on the gain and turn-off voltage ofSiPMs exposed to a reactor neutron fluence up to $\Phi$ = 5e13 cm$^{-2}$. Thecell has a pitch of 15 $\mu$m. The fluence dependence of gain and turn-offvoltage are reported. A reduction of the gain by 19% and an increase of$V_{off}$ by $\approx$0.5 V is observed after $\Phi$ = 5e13 cm$^{-2}$.

Radiation hardness study using SiPMs with single-cell readout