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Narrow-channel accumulated body nMOSFET devices with p-type side-gatessurrounding the active area have been electrically characterized between 100and 400 K with varied side-gate biasing (Vside). The subthreshold slope (SS)and drain induced barrier lowering (DIBL) decrease and threshold voltage (Vt)increases linearly with reduced temperature and reduced side-gate bias.Detailed analysis on a 27 nm x 78 nm (width x length) device show SS decreasingfrom 115 mV/dec at 400 K to 90 mV/dec at 300 K and down to 36 mV/dec at 100 K,DIBL decreasing by approximately 10 mV/V for each 100 K reduction in operatingtemperature, and Vt increasing from 0.42 V to 0.61 V as the temperature isreduced from 400 K to 100 K. Vt can be adjusted from ~ 0.3 V to ~ 1.1 V with~0.3 V/V sensitivity by depletion or accumulation of the body of the deviceusing Vside. This high level of tunability allows electronic control of Vt anddrive current for variable temperature operation in a wide temperature rangewith extremely low leakage currents (< 10-13 A).

Temperature Dependent Characteristics and Electrostatic Threshold Voltage Tuning of Accumulated Body MOSFETs