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Silicon carbide nanoparticles with diameters around 8 nm and with narrow sizedistribution have been finely mixed with doped silicon nanopowders and sinteredinto bulk samples to investigate the influence of nanoinclusions on electricaland thermal transport properties. We have compared the thermoelectricproperties of samples ranging from 0-5% volume fraction of silicon carbide. Thesilicon carbide nanoinclusions lead to a significant improvement in thethermoelectric figure of merit, ZT, largely due to an enhancement of theSeebeck coefficient. A semiclassical Boltzmann transport equation is used tomodel the electrical transport properties of the Seebeck coefficient andelectrical conductivity. The theoretical analysis confirms that theenhancements in the thermoelectric properties are consistent with the energyselective scattering of electrons induced by the offset between the siliconFermi level and the carbide conduction band edge. This study proves thatcareful engineering of the energy-dependent electron scattering rate canprovide a route towards relaxing long-standing constraints in the design ofthermoelectric materials.

Enhanced Thermoelectric ZT in the Tails of the Fermi Distribution via  Electron Filtering by Nanoinclusions -- Model Electron Transport in  Nanocomposites