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Organic photodetectors (OPDs) possess bright prospects in applications ofmedical imaging and wearable electronics due to the advantages such as lowcost, good biocompatibility, and good flexibility. Photomultiplication OPDs(PM-OPDs) enabled by the trap-assisted carrier tunneling injection effectexhibit external quantum efficiencies far greater than unity, thus the acquiredresponsivities are extremely high. However, the reported PM-OPDs with highresponsivity performances are all accompanied by high dark currents due to theintroduction of carrier traps, which inevitably results in inferiordetectivities. In this work, we modify a P3HT:PCBM donor-rich PM-OPD byintroducing an atomically thin Al2O3 interfacial layer through the ALDtechnique, obtaining a high responsivity of 8294 A/W and high detectivity of6.76*10^14 Jones, simultaneously, both of which are among the highest reportedfor bulk heterojunction PM-OPDs. Ascribed to the introduction of the atomicallythin Al2O3 layer, the metal-insulator-semiconductor (MIS) tunneling junction isformed, which brings forward a suppressed dark current along with an increasedamounts of holes tunneling under forward bias. Meanwhile, the weak lightdetection limit of the modified PM-OPD within the linear response range reachesthe level of nW/cm2. Based on the proposed PM-OPD, a proof-of-concept imagesensor with 26*26 pixels is demonstrated, which can respond to both ultravioletlight and visible light. The PM-OPD based sensor arrays can find broadapplications for medical imaging, wearable electronics, etc.

High-responsivity, High-detectivity Photomultiplication Organic Photodetector Realized by a Metal-Insulator-Semiconductor Tunneling Junction