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The integration of high-k dielectrics with two-dimensional (2D)semiconductors is a critical step towards high-performance nanoelectronics,which however remains challenging due to high density of interface states andthe damage to the monolayer 2D semiconductors. In this study, we propose aselective hydrogenation strategy to improve the interface properties while donot affect the 2D semiconductors. Using the interface of monolayer MoS2 andsilicon nitride as an example, we show substantially improved interfaceproperties for electronic applications after the interfacial hydrogenation, asevidenced by reduced inhomogeneous charge redistribution, increased bandoffset, and untouched electronic properties of MoS2. Interestingly, thishydrogenation process selectively occurs only at the silicon nitride surfaceand is compatible with the current semiconductor fabrication process. Wefurther show that this strategy is general and applicable to other interfacesbetween high-k dielectrics and 2D semiconductors such as HfO2 on the monolayerMoS2. Our results demonstrate a simple yet viable way to improve theinterfacial properties for integrating many high-k dielectrics on a broad rangeof two-dimensional transition metal disulfide semiconductors.

Selective hydrogenation improves interface properties of high-k dielectrics on 2D semiconductors