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A novel 2-dimensional electron gas (2DEG) system with high-mobility wasdiscovered at the interface of two perovskite oxides, a polar orthorhombicperovskite LaScO3 (LSO) and a nonpolar cubic perovskite BaSnO3 (BSO). Upondepositing the LSO film on the BSO film, the conductance enhancement and theresulting 2DEG density (n2D) was measured. Comparing the results with thepreviously reported LaInO3/BaSnO3 (LIO/BSO) polar interface, we applied theinterface polarization model to the LSO/BSO system, in which the polarizationexists only over 4 pseudocubic unit cells in LSO from the interface andvanishes afterward like the LIO/BSO interface. Based on the calculations of theself-consistent Poisson-Schrodinger equations, the LSO thickness dependence ofn2D of LSO/BSO heterointerface is consistent with this model. Furthermore, asingle subband in the quantum well is predicted. Using the conductive interfaceand the LSO as a gate dielectric, a 2DEG transistor composed of only perovskiteoxides with high field-effect mobility (uFE) close to 100 cm2 V-1 s-1 isdemonstrated.

High-mobility field-effect transistor using 2-dimensional electron gas at the LaScO3/BaSnO3 interface