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Mott transition has been realized in atomically thin monolayer (ML) of twodimensional semiconductors (WS$_2$) via optically excited carriers above acritical carrier density through many body interactions. The above nonlinearoptical transition occurs when excited electron hole pairs in ML WS2 continuumheavily interact with each other followed by transformation into a collectiveelectron hole plasma phase (EHP), by losing their identity as individualquasiparticles. This is manifested by the alluring red-shift-blue-shiftcrossover (RBC) phenomena of the excitonic peaks in the emission spectra,resulting from the synergistic attraction-repulsion processes at theMott-transition point. A systematic investigation of many-body effects isreported on ML WS$_2$, while considering the modulated dielectric screening ofthree different substrates, viz., silicon dioxide, sapphire, and gold.Substrate doping effects on ML WS$_2$ are discussed using the Ramanfingerprints and PL spectral weight, which are further corroborated usingtheoretical DFT calculations. Further the substrate dependent excitonic Bohrradius of ML WS$_2$ is extracted via modelling the emission energy shift withLennard-Jones potential. The variation of Mott point as well as excitonic Bohrradius is explained via substrate induced dielectric screening effect for boththe dielectric substrates, which is however absent in ML WS$_2$ on Au. Ourstudy therefore reveals diverse many-body ramifications in 2D semiconductorsand offers decisive outlooks on selecting the impeccable substrate materialsfor innovative device engineering.

Substrate Dependent Synergistic Many-Body Effects in Atomically Thin Two Dimensional WS$_2$