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Defect engineering is applied to hybrid (CH$_3$NH$_3$)PbI$_3$organic-inorganic perovskites. These materials have become one of the mostpromising low-cost alternatives to traditional semiconductors in the field ofphotovoltaics and light emitting devices. We use here Helium ion irradiation atlow energy as a tool for the controlled introduction of point defects in bothsingle crystals and polycrystalline thin films. The irradiation defects modifythe opto-electronic properties as probed using photoluminescence spectroscopyfrom 10K to room-temperature. 2 Contrary to usual semiconductors, we observe avery good resilience of the PL properties with irradiation, even associated toan enhancement of the optical emission at low temperature. We discuss theseresults in relation with the tetragonal to orthorhombic low-temperature phasetransition below T=160 K. A comparison between spectra from single crystals andpolycrystalline films, both with and without irradiation defects, allow abetter understanding of the light emission mechanisms in both kinds of samples.We thereby evidence radiation hardness of these materials and the specificityof defects and their impact over light emission properties.

Photoluminescence Tuning Through Irradiation Defects in CH$_3$NH$_3$PbI$_3$ Perovskites