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The prospect of 2-dimensional electron gases (2DEGs) possessing high mobilityat room temperature in wide-bandgap perovskite stannates is enticing for oxideelectronics, particularly to realize transparent and high-electron mobilitytransistors. Nonetheless only a small number of studies to date report 2DEGs inBaSnO3-based heterostructures. Here, we report 2DEG formation at theLaScO3/BaSnO3 (LSO/BSO) interface with a room-temperature mobility of 60 cm2/Vs at a carrier concentration of 1.7x1013 cm-2. This is an order of magnitudehigher mobility at room temperature than achieved in SrTiO3-based 2DEGs. Weachieved this by combining a thick BSO buffer layer with an ex-situhigh-temperature treatment, which not only reduces the dislocation density butalso produces a SnO2-terminated atomically flat surface, followed by the growthof an overlying BSO/LSO interface. Using weak-beam dark field imaging andin-line electron holography technique, we reveal a reduction of the threadingdislocation density, and provide direct evidence for the spatial confinement ofa 2DEG at the BSO/LSO interface. Our work opens a new pathway to explore theexciting physics of stannate-based 2DEGs at application-relevant temperaturesfor oxide nanoelectronics.

Oxide two-dimensional electron gas with high mobility at room-temperature