English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Tools annual

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Presents the access of premium content as premium feature

Premium Content

Global: Zendy Plus annual

Global: Zendy Free Plan

Monolithically combining silicon nitride (SiNx) photonics technology withIII-V active devices could open a broad range of on-chip applications spanninga wide wavelength range of ~400-4000 nm. With the development of nitride,arsenide, and antimonide lasers based on quantum well (QW) and quantum dot (QD)active regions, the wavelength palette of integrated III-V lasers on Sicurrently spans from 400 nm to 11 {\mu}m with a crucial gap in thered-wavelength regime of 630-750 nm. Here, we demonstrate the first red InGaPQW and far-red InP QD lasers monolithically grown on CMOS compatible Si (001)substrates with continuous-wave operation at room temperature. A low-thresholdcurrent density of 550 A/cm2 and 690 A/cm2 with emission at 680-730 nm wasachieved for QW and QD lasers on Si, respectively. This work takes the firstvital step towards integration of visible red lasers on Si allowing theutilization of integrated photonics for applications including biophotonicsensing, quantum computing, and near-eye displays.

Low-threshold InP quantum dot and InGaP quantum well visible lasers on silicon (001)