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Magnetic skyrmions have been suggested as information carriers for futurespintronic devices. As the first material with experimentally confirmedskyrmions, B20-type MnSi was the research focus for decades. Although B20-MnSifilms have been successfully grown on Si(111) substrates, there is no reportabout B20-MnSi films on Si(100) substrates, which would be more preferred forpractical applications. In this letter, we present the first preparation ofB20-MnSi on Si(100) substrates. It is realized by sub-second solid-statereaction between Mn and Si via flash-lamp annealing at ambient pressure. Theregrown layer shows an enhanced Curie temperature of 43 K compared with bulkB20-MnSi. The magnetic skyrmion signature is proved in our films by magneticand transport measurements. The millisecond-range flash annealing provides apromising avenue for the fabrication of Si-based skyrmionic devices.

B20-MnSi films grown on Si(100) substrates with magnetic skyrmion signature