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This article presents several design techniques to fabricatemicro-electro-mechanical systems (MEMS) using standard complementarymetal-oxide semiconductor (CMOS) processes. They were applied to fabricate highyield CMOS-MEMS shielded Lorentz-force magnetometers (LFM). The multilayeredmetals and oxides of the back-end-of-line (BEOL), normally used for electronicrouting, comprise the structural part of the MEMS. The most importantfabrication challenges, modeling approaches and design solutions are discussed.Equations that predict the Q factor, sensitivity, Brownian noise and resonantfrequency as a function of temperature, gas pressure and design parameters arepresented and validated in characterization tests. A number of the fabricatedmagnetometers were packaged into Quad Flat No-leads (QFN) packages. We showthis process can achieve yields above 95 % when the proper design techniquesare adopted. Despite CMOS not being a process for MEMS manufacturing, estimatedperformance (sensitivity and noise level) is similar or superior to currentcommercial magnetometers and others built with MEMS processes. Additionally,typical offsets present in Lorentz-force magnetometers were prevented with ashielding electrode, whose efficiency is quantified. Finally, severalreliability test results are presented, which demonstrate the robustnessagainst high temperatures, magnetic fields and acceleration shocks.

Design, Fabrication, Characterization and Reliability Study of CMOS-MEMS Lorentz-Force Magnetometers