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Thermophotonics (TPX) is a technology close to thermophotovoltaics (TPV),where a heated light-emitting diode (LED) is used as the active thermal emitterof the system. It allows to tune the heat flux, by means ofelectroluminescence, to a spectral range matching better the gap of aphotovoltaic cell. The concept is extended to near-field thermophotonics(NF-TPX), where enhanced energy conversion is due to both electric control andwave tunneling. We perform a thorough numerical analysis of a GaAs-based NF-TPXdevice, by coupling a near-field radiative heat transfer solver based onfluctuational electrodynamics with an algorithm based on a simplified versionof the drift-diffusion equations in 1D. This allows for the investigation ofthe emission and absorption profiles in the LED and the photovoltaic (PV) cell,and for the scrutiny of the impact of key parameters. We also demonstrate thatthe performance obtained with this algorithm can approach idealized cases forimproved devices. For the considered simplified architecture and 300 Ktemperature difference, we find a power density output of 1 W.cm--2 ,underlining the potential for waste heat harvesting close to ambienttemperature.

GaAs-Based Near-Field Thermophotonic Devices: Approaching The Idealized Case With One-Dimensional PN Junctions