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We investigated the chemical pressure effects on structural and electronicproperties of SnTe-based material using partial substitution of Sn byAg0.5Bi0.5, which results in lattice shrinkage. For Sn1-2x(AgBi)xTe,single-phase polycrystalline samples were obtained with a wide range of x. Onthe basis of band calculations, we confirmed that the Sn1-2x(AgBi)xTe system isbasically possessing band inversion and topologically preserved electronicstates. To explore new superconducting phases related to the topologicalelectronic states, we investigated the In-doping effects on structural andsuperconducting properties for x = 0.33 (AgSnBiTe3). For (AgSnBi)(1-y)/3InyTe,single-phase polycrystalline samples were obtained for y = 0-0.5 byhigh-pressure synthesis. Superconductivity was observed for y = 0.2-0.5. For y= 0.4, the transition temperature estimated from zero-resistivity state was 2.4K, and the specific heat investigation confirmed the emergence of bulksuperconductivity. Because the presence of band inversion was theoreticallypredicted, and the parameters obtained from specific heat analyses werecomparable to In-doped SnTe, we expect that the (AgSnBi)(1-y)/3InyTe and other(Ag,In,Sn,Bi)Te phases are candidate systems for studying topologicalsuperconductivity.

Superconductivity in In-doped AgSnBiTe3 with possible band inversion