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Domain boundaries in ferroelectric materials exhibit rich and diversephysical properties distinct from their parent materials and have been proposedfor novel applications in nanoelectronics and quantum information technology.Due to their complexity and diversity, the internal atomic and electronicstructure of domain boundaries that governs the electronic properties as wellas the kinetics of domain switching remains far from being elucidated. By usingscanning tunneling microscopy and spectroscopy (STM/S) combined with densityfunctional theory (DFT) calculations, we directly visualize the atomicstructure of domain boundaries in two-dimensional (2D) ferroelectric beta'In2Se3 down to the monolayer limit and reveal a double-barrier energy potentialof the 60{\deg} tail to tail domain boundaries for the first time. We furthercontrollably manipulate the domain boundaries with atomic precision by STM andshow that the movements of domain boundaries can be driven by the electricfield from an STM tip and proceed by the collective shifting of atoms at thedomain boundaries. The results will deepen our understanding of domainboundaries in 2D ferroelectric materials and stimulate innovative applicationsof these materials.

Atomic-Scale Visualization and Manipulation of Domain boundaries in 2D Ferroelectric In2Se3