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Using ab initio tight-binding approaches, we investigate Floquet bandengineering of the 1T' phase of transition metal dichalcogenides (MX2, M = W,Mo and X = Te, Se, S) monolayers under the irradiation with circularlypolarized light. Our first principles calculations demonstrate that light caninduce important transitions in the topological phases of this emergingmaterials family. For example, upon irradiation, Te-based MX2 undergoes a phasetransition from quantum spin Hall (QSH) semimetal to time-reversal symmetrybroken QSH insulator with a nontrivial band gap of up to 92.5 meV. On the otherhand, Se- and S-based MX2 undergoes the topological phase transition from theQSH effect to the quantum anomalous Hall (QAH) effect and into trivial phaseswith increasing light intensity. From a general perspective, our work bringsfurther insight into non-equilibrium topological systems.

Floquet band engineering and topological phase transitions in 1T' transition metal dichalcogenides