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Vacancy swelling of quasicrystals under irradiation is considered. Inquasicrystals, the evolution of dislocations is accompanied by the formation ofphasons which are localized topological defects of the vacancy and interstitialtypes. At moderate temperatures the diffusivity of phasons is low which leadsto the formation of ring-or disk-shaped phason trails inside dislocation loops.To find the capture efficiency of point defects by a dislocation loop with thecomplementary ring of phasons the steady-state drift-diffusional problem issolved in the toroidal geometry by the successive overrelaxation method. It isshown that phasons significantly reduce the bias of dislocations towardsabsorption of interstitial atoms. For this reason, quasicrystalline materialsare predicted to exhibit increased resistance to vacancy swelling.

Bias factor of dislocation loops in quasicrystalline materials