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Microresonator frequency combs, or microcombs, have gained wide appeal fortheir rich nonlinear physics and wide range of applications. Stoichiometricsilicon nitride films grown via low-pressure chemical vapor deposition (LPCVD),in particular, are widely used in chip-integrated Kerr microcombs. Critical tosuch devices is the ability to control the microresonator dispersion, which hascontributions from both material refractive index dispersion and geometricconfinement. Here, we show that modifications to the LPCVD growth conditions,specifically the ratio of the gaseous precursors, has a significant impact onmaterial dispersion and hence the overall microresonator dispersion. Incontrast to the many efforts focused on comparison between Si-rich films andstoichiometric (Si$_3$N$_4$) films, here we entirely focus on films that arewithin the nominally stoichiometric growth regime. We further show thatmicroresonator geometric dispersion can be tuned to compensate for changes inthe material dispersion.

Impact of Stoichiometric Silicon Nitride Growth Conditions on Dispersion Engineering of Broadband Microresonator Frequency Combs