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Monolayer WS2 has been a competitive candidate in electrical andoptoelectronic devices due to its superior optoelectronic properties. To tacklethe challenge of thermal management caused by the decreased size andconcentrated heat in modern ICs, it is of great significance to accuratelycharacterize the thermal conductivity of the monolayer WS2, especially withsubstrate supported. In this work, the dual-wavelength flash Raman method isused to experimentally measure the thermal conductivity of the suspended andthe Si/SiO2 substrate supported monolayer WS2 at a temperature range of 200 K -400 K. The room-temperature thermal conductivity of suspended and supported WS2are 28.45 W/mK and 15.39 W/mK, respectively, with a ~50% reduction due tosubstrate effect. To systematically study the underlying mechanism behind thestriking reduction, we employed the Raman spatial mapping analysis combinedwith the molecular dynamics simulation. The analysis of Raman spectra showedthe increase of doping level, reduction of phonon lifetime and suppression ofout-of-plane vibration mode due to substrate effect. In addition, the phonontransmission coefficient was mutually verified with Raman spectra analysis andfurther revealed that the substrate effect significantly enhances the phononscattering at the interface and mainly suppresses the acoustic phonon, thusleading to the reduction of thermal conductivity. The thermal conductivity ofother suspended and supported monolayer TMDCs (e.g. MoS2, MoSe2 and WSe2) werealso listed for comparison. Our researches can be extended to understand thesubstrate effect of other 2D TMDCs and provide guidance for future TMDCs-basedelectrical and optoelectronic devices.

Substrate effect on thermal conductivity of monolayer WS2: Experimental measurement and theoretical analysis