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Ferroelectrics offer a promising materials platform to realizeenergy-efficient non-volatile memory technology with the FeFET-basedimplementations being one of the most area-efficient ferroelectric memoryarchitectures. However, the FeFET operation entails a fundamental trade-offbetween the read and the program operations. To overcome this trade-off, wepropose in this work, a novel device, Mott-FeFET, that aims to replace theSilicon channel of the FeFET with VO2- a material that exhibits an electricallydriven insulator-metal phase transition. The Mott-FeFET design, whichdemonstrates a (ferroelectric) polarization-dependent threshold voltage,enables the read current distinguishability (i.e., the ratio of current sensedwhen the Mott-FeFET is in state 1 and 0, respectively) to be independent of theprogram voltage. This enables the device to be programmed at low voltageswithout affecting the ability to sense/read the state of the device. Our workprovides a pathway to realize low-voltage and energy-efficient non-volatilememory solutions.

A Three-terminal Non-Volatile Ferroelectric Switch with an Insulator-Metal Transition Channel