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In this paper we demonstrated the thermal Atomic Layer Deposition (ALD)growth at 250 {\deg}C of highly homogeneous and ultra-thin ($\approx$ 3.6 nm)$Al_2O_3$ films with excellent insulating properties directly onto a monolayer(1L) $MoS_2$ membrane exfoliated on gold. Differently than in the case of 1L$MoS_2$ supported by a common insulating substrate ($Al_2O_3/Si$), a betternucleation process of the high-k film was observed on the 1L $MoS_2/Au$ systemsince the ALD early stages. Atomic force microscopy analyses showed a $\approx50\%$ $Al_2O_3$ surface coverage just after 10 ALD cycles, its increasing up to$>90\%$ (after 40 cycles), and an uniform $\approx$ 3.6 nm film, after 80cycles. The coverage percentage was found to be significantly reduced in thecase of 2L $MoS_2/Au$, indicating a crucial role of the interfacial interactionbetween the aluminum precursor and $MoS_2/Au$ surface. Finally, Ramanspectroscopy and PL analyses provided an insight about the role played by thetensile strain and p-type doping of 1L $MoS_2$ induced by the gold substrate onthe enhanced high-k nucleation of $Al_2O_3$ thin films. The presently shownhigh quality ALD growth of high-k $Al_2O_3$ dielectrics on large area 1L$MoS_2$ induced by the Au underlayer can be considered of wide interest forpotential device applications based on this material system.

Direct atomic layer deposition of ultrathin aluminium oxide on monolayer $MoS_2$ exfoliated on gold: the role of the substrate