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We envision the use of an indium tin oxide (ITO) thin film as part of abi-layered silicon-photonics subwavelength device to boostnonlinearity-assisted all-passive nonreciprocal behavior. The asymmetricp-polarized oblique excitation of a mode near the epsilon-near-zero (ENZ)frequency, with highly-confined and enhanced normal electric field componentand large absorption, allows to harness ITO's strong ultrafast nonlinearresponse for the generation of a notable nonreciprocal performance in thetwo-port element. Though limited by loss, we find the device's optimaloperational point and the maximum nonreciprocal transmittance ratio attainablevs. light intensity -- including an apparent upper bound slightly over 2 --,and we perform exhaustive numerical simulations considering nonlinear processesof both anharmonic and thermal nature that validate our predictions, includingsteady-state and pulsed-laser excitations.

Nonreciprocal ENZ-Dielectric Bilayers: Enhancement of Nonreciprocity  from a Nonlinear Transparent Conducting Oxide Thin Film at Epsilon-Near-Zero  (ENZ) Frequency