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Statistics and dynamics of 2D rogue waves in a broad-area semiconductor laserwith an intracavity saturable absorber are numerically investigated under theeffect of transverse carrier diffusion. We show that lateral diffusion ofcarriers alters the statistics of rogue waves by enhancing their formation insmaller ratios of carrier lifetimes in the active and passive materials whilesuppressing them when the ratio is larger. Temporal dynamics of the emittedrogue waves is also studied and shown that finite nonzero transverse carrierdiffusion coefficient gives them a longer duration. To further approach therealistic experimental situation, we also investigated statistics and dynamicsof rogue waves by simulating a circular disk-shape pump which replaces the flatpump profile typically used in numerical simulations of broad-area lasers. Weshow that finite pump shape reduces the number emitted rogue waves per unitarea for large carrier lifetime ratios and increases that for smaller values ofthe ratio in both below and above laser threshold. Temporal width of theemitted rogue waves is also shown to reduce as a consequence of removing thenonphysical effects of infinite flat pump on carrier dynamics.

2D optical rogue waves affected by transverse carrier diffusion in broad-area semiconductor lasers with a saturable absorber