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We report the observation of the antisymmetric magnetoresistance (MR) inperpendicular magnetized CoTb films with inhomogeneous magnetizationdistribution driven by gradient magnetic field. By synchronously characteringthe domain pattern evolution during transport measurements, we demonstrate thatthe nonequilibrium currents in the vicinity of tilting domain walls give riseto such anomalous MR. Moreover, theoretical calculation and analysis revealthat the geometry factor of the multidomain texture plays a dominant role ingenerating the nonequilibrium current. The explicitly established interplaybetween the anomalous transport behaviors and the particular domain wallgeometry is essential to deepening understanding of the antisymmetric MR, andpave a new way for designing novel domain wall electronic devices.

Antisymmetric magnetoresistance due to domain wall tilting in perpendicular magnetized films