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Impurity spins in crystal matrices are promising components in quantumtechnologies, particularly if they can maintain their spin properties whenclose to surfaces and material interfaces. Here, we investigate an attractivecandidate for microwave-domain applications, the spins of group-VI Impurityspins in crystal matrices are promising components in quantum technologies,particularly if they can maintain their spin properties when close to surfacesand material interfaces. Here, we investigate an attractive candidate formicrowave-domain applications, the spins of group-VI $^{125}$Te$^+$ donorsimplanted into natural Si at depths as shallow as 20~nm. We show that surfaceband-bending can be used to ionise such near-surface Te to spin-active Te$^+$state, and that optical illumination can be used further to control the Tedonor charge state. We examine spin activation yield, spin linewidth,relaxation ($T_1$) and coherence times (\ttwo) and show how a zero-field3.5~GHz `clock transition' extends spin coherence times to over 1~ms, which isabout an order of magnitude longer than other near-surface spin systems.

Spin coherence of near-surface ionised $^{125}$Te$^+$ donors in silicon