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Multiple applications of relevance in photonics, such as spectrally efficientcoherent communications, microwave synthesis or the calibration of astronomicalspectrographs, would benefit from soliton microcombs operating at repetitionrates <50GHz. However, attaining soliton microcombs with low repetition ratesusing photonic integration technologies represents a formidable challenge.Expanding the cavity volume results in a drop of intracavity intensity that canonly be offset by an encompassing rise in quality factor. In addition, reducingthe footprint of the microresonator on a planar integrated circuit requiresrace-track designs that typically result into extra modal coupling losses anddisruptions into the dispersion, preventing the generation of the dissipativesingle soliton state. Here, we report the generation of sub-50GHz solitonmicrocombs in dispersion-engineered silicon nitride microresonators. Incontrast to other approaches, our devices feature an optimized racetrack designthat minimizes the coupling to higher-order modes and reduces the footprintsize by an order of magnitude to ~1mm2. The statistical intrinsic Q reaches 19million, and soliton microcombs at 20.5GHz and 14.0GHz repetition rates aresuccessfully generated. Importantly, the fabrication process is entirelysubtractive, meaning that the devices can be directly patterned on the Si3N4film. This standard approach facilitates integration with further componentsand devices.

Integrated, ultra-compact high-Q silicon nitride microresonators for low-repetition-rate soliton microcombs