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Here we investigate the use of single-junction InGaAs airbridge cells (ABCs)at elevated power densities. Such conditions are relevant to manythermophotovoltaic (TPV) applications, ranging from space to on-demandrenewable electricity, and require effective management of heat and chargecarriers. Experimental characterization of an InGaAs ABC with varying emitterand cell temperature is used to develop a predictive device model where carrierlifetimes and series resistances are the sole fitting parameters. The utilityof this model is demonstrated through its use in identifying near-termopportunities for improving performance at elevated power densities, and fordesigning a thermal management strategy that maximizes overall power output.This model shows that an InGaAs ABC with material quality that leads to thelongest reported carrier lifetimes can attain efficiencies exceeding 40% at 0.5W/cm2, even when considering the power necessary to cool the cells.

Sustaining Efficiency at Elevated Power Densities with InGaAs Air Bridge Cells