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Recently, CoSi has been identified to have unconventional electronic topologydue to lack of inversion center in its B20 cubic structure. The electronictopology has been reported to be present at three nodal points found in theband structure. Two of these nodal points are situated at the $\Gamma$ (G1 \&G2) and one at $R$ (R1) point. Based on this, we present a study where varioustransport coefficients are investigated by using \textit{first-principle} basedDFT method for the temperature (T) range 40-300 K. For the chemical potential($\mu$) corresponding to energies of these nodal points and at the Fermi level(E$_F$), 3D constant energy surfaces are constructed. They have shown that thenumber of states available at energies of these nodal points and the E$_F$follows an increasing trend as R1 $>$ G2 $>$ E$_F$ $>$ G1 at T = 0 K. Similarincreasing behavior seems to follow by other transport coefficients atdifferent $\mu$ with T rise such as electricalconductivity($\sigma$)/relaxation time($\tau$) ratio and electronic thermalconductivity ($\kappa_e/\tau$ = $\kappa^0$). For example, at T = 100 K, $\sigma/ \tau$ $\sim$ 0.13$\times$10$^{20}$ $\Omega^{-1} m^{-1} s^{-1}$ at G1 whereasits value reaches $ \sim$ 0.18$\times$10$^{20}$ $\Omega^{-1} m^{-1} s^{-1}$ atR1 nodal point. However, Seebeck coefficient ($S$) seems to follow the trend asG2 $>$ E$_F$ $>$ R1 $>$ G1 at any given T. The values of $S$ are obtained to bepositive at the $\mu$ corresponding to the G2, R1 and E$_F$ (except G1) whichis increasing with the rise in T. Also, the dominant charge carriers at G1point are found to be electrons for T $<$ 225 K whereas for T $>$ 225 K, thecharge carriers are obtained to be dominated by holes. Furthermore, the dopingconcentrations have also been calculated for G1, G2 and R1 points.

First-priniciple based study of transport properties of non-trivial topological fermions of CoSi