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We investigated the use of dielectric layers produced by atomic layerdeposition (ALD) as an approach to strain mitigation in compositesilicon/superconductor devices operating at cryogenic temperatures. We showthat the addition of an ALD layer acts to reduce the strain of spins closest tosilicon/superconductor interface where strain is highest. We show thatappropriately biasing our devices at the hyperfine clock transition of bismuthdonors in silicon, we can remove strain broadening and that the addition of ALDlayers left $T_2$ (or temporal inhomogeneities) unchanged in these naturalsilicon devices.

Reducing strain in heterogeneous quantum devices using atomic layer deposition