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Electronic transmission in monolayer ReS$_{2}$ and ReS$_{2}$ based van derWaals (vdW) heterointerfaces are studied here. Since ReS$_{2}$/WSe$_{2}$ andReS$_{2}$/MoSe$_{2}$ type-II vdW heterostructures are suitable for nearinfrared (NIR)/short-wave infrared (SWIR) photodetection, the role ofinterlayer coupling at the heterointerfaces is examined in this work. Besides,a detailed theoretical study is presented employing density functional theory(DFT) and nonequilibrium Green's function (NEGF) combination to analyse thetransmission spectra of the two-port devices with ReS$_{2}$/WSe$_{2}$ andReS$_{2}$/MoSe$_{2}$ channels and compare the near-equilibrium conductancevalues.Single layer distorted1T ReS$_{2}$ exhibits formation of parallel chainsof 'Re' - 'Re' bonds, leading to in-plane anisotropy. Owing to this structuralanisotropy, the charge carrier transport is very much orientation dependent inReS$_{2}$. Therefore, this work is further extended to investigate the role ofclusterized 'Re' atoms in electronic transmission.

First-principles based simulations of electronic transmission in ReS$_{2}$/WSe$_{2}$ and ReS$_{2}$/MoSe$_{2}$ type-II vdW heterointerfaces