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Understanding the resistive switching behavior, or the resistance change, ofoxide-based memristor devices, is critical to predicting their responses withknown electrical inputs. Also, with the known electrical response of amemristor, one can confirm its usefulness in non-volatile memory and/or inartificial neural networks. Although bi- or multi-layered oxides have beenreported to improve the switching performance, compared to the single oxidelayer, the detailed explanation about why the switching can easily be improvedfor some oxides combinations is still missing. Herein, we fabricated two typesof bi-layered heterostructure devices, quasi-HfO$_x$/AlO$_y$ andAlO$_y$/HfO$_x$ sandwiched between Au electrodes, and their electricalresponses are investigated. For a deeper understanding of the switchingmechanism, the performance of a HfOx only device is also considered, whichserves as a control device. The role of bi-layered heterostructures isinvestigated using both the experimental and simulated results. Our resultssuggest that synergistic switching performance can be achieved with a propercombination of these materials and/or devices. These results open the avenuefor designing more efficient double- or multi-layers memristor devices for ananalog response.

Quasi-HfO$_x$/ AlO$_y$ and AlO$_y$/ HfO$_x$ Based Memristor Devices: Role of Bi-layered Oxides in Digital Set and Analog Reset Switching