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Interlayer excitons (ILXs) - electron-hole pairs bound across two atomicallythin layered semiconductors - have emerged as attractive platforms to studyexciton condensation, single-photon emission and other quantum-informationapplications. Yet, despite extensive optical spectroscopic investigations,critical information about their size, valley configuration and the influenceof the moir\'e potential remains unknown. Here, we captured images of the time-and momentum-resolved distribution of both the electron and the hole that bindto form the ILX in a WSe2/MoS2 heterostructure. We thereby obtain a directmeasurement of the interlayer exciton diameter of ~5.4 nm, comparable to themoir\'e unit-cell length of 6.1 nm. Surprisingly, this large ILX is welllocalized within the moir\'e cell to a region of only 1.8 nm - smaller than thesize of the exciton itself. This high degree of localization of the interlayerexciton is backed by Bethe-Salpeter equation calculations and demonstrates thatthe ILX can be localized within small moir\'e unit cells. Unlike large moir\'ecells, these are uniform over large regions, thus allowing the formation ofextended arrays of localized excitations for quantum technology.

Moir\'e-localized interlayer exciton wavefunctions captured by imaging its electron and hole constituents