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We report on the observation of complex nonlinear intensity dependence of thecircular and linear photogalvanic currents induced by infrared radiation incompensated (Bi$_{0.3}$Sb$_{0.7}$)$_2$(Te$_{0.1}$Se$_{0.9}$)$_3$ 3D topologicalinsulators. The photocurrents are induced by direct optical transitions betweentopological surface and bulk states. We show that an increase of the radiationintensity results first in a highly superlinear raise of the amplitude of bothtypes of photocurrents, whereas at higher intensities the photocurrentsaturates. Our analysis of the observed nonlinearities shows that thesuperlinear behavior of the photocurrents is caused by a heating of theelectron gas, while the saturation is induced by a slow relaxation of thephotoexcited carriers resulting in absorbance bleaching. The observednonlinearities give access to the Fermi level position with respect to theDirac point and the energy relaxation times of Dirac fermions providing anexperimental room temperature probe for topological surface states.

Highly superlinear photogalvanic effects in  (Bi$_{0.3}$Sb$_{0.7}$)$_2$(Te$_{0.1}$Se$_{0.9}$)$_3$: Probing 3D topological  insulator surface states at room temperature