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For simultaneously achieving the high-power factor and low lattice thermalconductivity of Si-Ge based thermoelectric materials, we employed, in thisstudy, constructively modifying the electronic structure near the chemicalpotential and nano-structuring by low temperature and high-pressure sinteringon nano-crystalline powders. Nickel was doped to create the impurity statesnear the edge of the valence band for enhancing the power factor with boron fortuning the carrier concentration. The nanostructured samples with the nominalcomposition of Si0.65-xGe0.32Ni0.03Bx (x = 0.01, 0.02, 0.03, and 0.04) weresynthesized by the mechanical alloying followed low-temperature andhigh-pressure sintering process. A large magnitude of Seebeck coefficientreaching 321 {\mu}VK-1 together with a small electrical resistivity of 4.49m{\Omega}cm, leads to a large power factor of 2.3 Wm-1K-2 at 1000 K. Withsuccessfully reduced thermal conductivity down to 1.47 Wm-1K-1, a large valueof ZT ~1.56 was obtained for Si0.65-xGe0.32Ni0.03B0.03 at 1000 K

Synergetic enhancement of power factor and suppression of lattice  thermal conductivity via electronic structure modification and  nanostructuring on Ni and B co-doped p-type Si-Ge alloy