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A crucial requirement for quantum computing, in particular for scalablequantum computing and error correction, is a fast and high-fidelity qubitreadout. For semiconductor based qubits, one limiting factor for locallow-power signal amplification, is the output swing of the charge sensor. Wedemonstrate GaAs and Si/SiGe asymmetric sensing dots (ASDs) specificallydesigned to provide a significantly improved response compared to conventionalcharge sensing dots. Our ASD design features a strongly decoupled drainreservoir from the sensor dot, which mitigates negative feedback effects foundin conventional sensors. This results in a boosted output swing of$3\,\text{mV}$, which exceeds the response in the conventional regime of ourdevice by more than ten times. The enhanced output signal paves the way foremploying very low-power readout amplifiers in close proximity to the qubit.

Sensing dot with high output swing for scalable baseband readout of spin qubits