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The GaAs-based material system is well-known for the implementation of InAsquantum dots (QDs) with outstanding optical properties. However, these dotstypically emit at a wavelength of around 900nm. The insertion of a metamorphicbuffer (MMB) can shift the emission to the technologically attractive telecomC-band range centered at 1550nm. However, the thickness of common MMB designslimits their compatibility with most photonic resonator types. Here we reporton the MOVPE growth of a novel InGaAs MMB with a non-linear indium contentgrading profile designed to maximize plastic relaxation within minimal layerthickness. Single-photon emission at 1550nm from InAs QDs deposited on top ofthis thin-film MMB is demonstrated. The strength of the new design is proven byintegrating it into a bullseye cavity via nano-structuring techniques. Thepresented advances in the epitaxial growth of QD/MMB structures form the basisfor the fabrication of high-quality telecom non-classical light sources as akey component of photonic quantum technologies.

Thin-Film InGaAs Metamorphic Buffer for telecom C-band InAs Quantum Dots and Optical Resonators on GaAs Platform