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To achieve high device performance and high reliability for the galliumnitride (GaN)-based high electron mobility transistors (HEMTs), efficient heatdissipation is important but remains challenging. Enormous efforts have beenmade to transfer a GaN device layer onto a diamond substrate with a highthermal conductivity by bonding. In this work, two GaN-diamond bondedcomposites are prepared via modified surface activated bonding (SAB) at roomtemperature with silicon interlayers of different thicknesses (15 nm and 22nm). Before and after post-annealing process at 800 oC, thermal boundaryconductance (TBC) across the bonded interface including the interlayer and thestress of GaN layer are investigated by time-domain thermoreflectance and Ramanspectroscopy, respectively. After bonding, the 15 nm Si interlayer achieved ahigher TBC. The post-annealing significantly increased the TBC of bothinterfaces, while the TBC of 22 nm silicon interlayer increased greater andbecame higher than that of 15 nm. Detailed investigation of the microstructureand composition of the interfaces were carried out to understand the differencein interfacial thermal conduction. The obtained stress was no more than 230 MPafor both before and after the annealing, and this high thermal stability of thebonded composites indicates that the room temperature bonding can realize aGaN-on-diamond template suitable for further epitaxial growth or deviceprocess. This work brings a novel strategy of SAB followed by high-temperatureannealing to fabricate a GaN-on-diamond device with a high TBC.

A Novel Strategy for GaN-on-Diamond Device with a High Thermal Boundary Conductance