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Inter-terminal capacitances (ITCs) have major influence on the dynamicperformance of power SiC MOSFETs. Knowledge of the exact values for the ITCs isrequired in order to perform accurate and predictive compact model simulationsof their dynamic performance. Since commercial SiC MOSFETs are capable ofoperating in a wide range of temperatures, it is important to know the valuesof ITCs in the whole temperature range of operation. Direct measurements of theITCs with standard equipment is possible only at low current levels (i.e. inthe off-state (Vgs < Vth) for Vds > 0 V), however their values in the on-state(Vgs>Vth) also influence the MOSFETs switching performance. In this work, ITCsof a planar SiC MOSFET in the on-state are studied by the means of a calibratedTCAD model, revealing substantial temperature dependence in the range of300-450 K. In the first approximation, this temperature dependence of the ITCscan be explained by a weaker temperature dependence of the MOSFET channelresistance in comparison to its JFET and epitaxial layer resistances. Inaddition, it is shown that at high frequencies stray inductances of theTO-247-3 package result in a change of the extracted values of the on-stateITCs. This effect is already notable at 1 MHz.

Temperature dependence of on-state inter-terminal capacitances (Cgd and Cgs) of SiC MOSFETs and frequency limitations of their measurements