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Most oscillating reactions (ORs) happen in solutions. Few existingsolid-based ORs either happen on solid/gas (e.g., oxidation or corrosion) orsolid/liquid interfaces, or at the all-solid interfaces neighboring to metalsor ionic conductors (e.g., electrolysis or electroplate). We report in thispaper a new type of all-solid based OR that happens at the insulator (amorphousSiO$_2$)/semiconductor (Si) interface with the interfacial point defects as theoscillating species. This OR is the first example of the point-defect coupledORs (PDC-ORs) proposed by H. Schmalzried et al. and J. Janek et al. decadesago. We use proton implantation as the driving force of the oscillation, andemploy techniques common in semiconductor device characterization to monitorthe oscillation in situ. This approach not only overcomes the difficultiesassociated with detecting reactions in solids, but also accurately measure theoscillating ultra-low concentration ($10^{10}\sim10^{11}$ cm$^{-2}$) of theinterfacial charged point-defects. We propose a mechanism for the reportedPDC-OR based on the Brusselator model by identifying the interfacial reactions.

Emerging Oscillating Reactions at the Insulator/Semiconductor Solid/Solid Interface via Proton Implantation